Our team is comprised of individuals with deep technology experience and understanding, and a track record of innovation and business success, who share our customers’ commitment to UV LED solutions that contribute to healthy life and living around the world.
Larry Felton: President and CEO: Larry Felton is President and CEO at Crystal IS. He has more than fifteen years of experience commercializing disruptive semiconductor technology, including process and product development and factory start-up. Prior to joining Crystal IS, he was Chief Technology Officer and Vice President of R&D at Evergreen Solar. He was the Advanced Packaging Development Manager for Micro-machined Product Division at Analog Devices. In that role, he led development of packaging for ADI's industry-leading accelerometer and gyroscopes. Earlier in his career, he held positions at Foster-Miller and the Center for Manufacturing Productivity and Technology Transfer at Rensselaer Polytechnic Institute. He received his Ph.D. in Materials Engineering from Rensselaer and his M.S. in Solid State Science and Technology and B.S. in Chemical Engineering from Syracuse University. He holds 18 U.S. patents.
Leo Schowalter:Chief Technology Officer: Dr. Schowalter is one of the original co-founders of Crystal IS. He has over 30 years’ experience in crystal growth, semiconductor thin film and nanotechnology. After receiving his Ph.D. in Physics from the University of Illinois, Dr. Schowalter joined GE's Global Research Center in upstate NY. Later he transitioned to Rensselaer Polytechnic Institute (RPI) as a full professor and went on to chair the Physics Department from 1997 to 2000. He has published over 160 articles, co-edited five proceedings volumes, given over 65 invited talks, and holds 17 patents, with 26 pending. He is a recognized figure in the global technology community regarding crystal growth, thin-film, nanotechnology, and nitride semiconductors. In his spare time Leo enjoys hiking, golfing, skiing and snowboarding.
Shawn Gibb: Vice President of Engineering: Mr. Gibb has been leading the engineering team at Crystal IS since 2008. He has 15 years of experience in the epitaxial growth and processing of III-Nitride materials and devices for optoelectronic and high frequency RF applications. Prior to joining Crystal he held a position at RF Micro Devices where he was responsible for developing and scaling of III-N materials and devices used in their high power transistor product offerings. Shawn has a M.E. in Materials Engineering from Stevens Institute of Technology as well as B.S./B.E. degrees in Chemistry and Chemical Engineering from New York University and Stevens Institute of Technology, respectively. He has four patents relating to the growth and processing of wide bandgap materials and devices. In his spare time Shawn enjoys playing bass guitar and spending time with his family.
Therese Jordan: Senior Vice President of Business Development: Terri Jordan joined Crystal IS in 2011. Her passion is bringing clean tech innovations to the global community. Terri has extensive experience as a business development executive in energy, environment, and materials. Before joining Crystal IS she led business development worldwide at Konarka Technologies, Inc., a solar panel manufacturer. Prior to this she spent 15 years in positions of increasing leadership responsibility at GE in technology, market development, and quality roles, all focused on materials-based businesses. She also was formerly Director of Global Marketing for Victrex plc, a high performance materials company. Terri serves as an advisor to several organizations and forums involving energy and environment. She holds a BS degree from Tufts University in Chemical Engineering and an M.S. and Ph.D. in Materials Science from University of Connecticut. She has earned four patents. In her free time she enjoys triathlons, yoga, and the great outdoors.
Masato Toita: Vice President of Product Development: Masato Toita joined Asahi Kasei in 1989 and has been engaged in product development activities at Crystal IS since 2010. He has over 20 years of experience in semiconductor manufacturing technology, including mass production of Si based ultra large scale integrated circuits and research on InGaAs metamorphic HEMTs. Masato received his Ph.D. from Tohoku University for work on 1/f noise in MOS transistors. He holds eight Japanese patents.