Crystal IS today announced a major technology milestone with the production of its one hundredth 100 mm Aluminum Nitride (AlN) wafer from its pilot-production line. This achievement represents a significant step forward in the development of advanced ultra-wide bandgap semiconductor materials and reinforces the Capital Region’s role as a national center for next‑generation semiconductor innovation.
The Green Island pilot line has an initial capacity of 1,250 substrates per year, scalable to 10,000. This expansion strengthens the region’s advanced manufacturing infrastructure and supports a broader ecosystem critical to U.S. leadership in semiconductor technology.
Crystal IS’s progress reflects years of scientific investment and deep collaboration with academic and industry partners. The company’s advancements in AlN enable high-performance optoelectronic, RF and power electronics essential to water treatment, aerospace, defense, clean energy, and other strategic sectors. By maturing its AlN platform, Crystal IS is contributing to a more resilient domestic semiconductor supply chain and ensuring continued national leadership in critical materials.
“This milestone underscores the technical excellence and pioneering spirit of our team,” said Eoin Connolly, President & CEO of Crystal IS. “Expanding our capabilities here in Green Island strengthens the Capital Region’s position at the forefront of semiconductor innovation and supports the United States’ ongoing leadership in this strategically vital field.”
As global demand for advanced semiconductors accelerates, Crystal IS’s investment in domestic production capacity highlights the importance of sustained innovation, regional expertise, and public‑private partnerships in building a competitive U.S. semiconductor industry. Additional information about the pilot production line and next generation AlN semiconductors can be found here.