Crystal IS Advances 100 mm AlN Substrates to Enable the Next Generation of UVC, RF, and Power Devices
Crystal IS has announced a strategic shift to discontinue UVC LED device production and focus on advancing aluminum nitride (AlN) substrate technology—the foundational material for high‑performance UVC LEDs and a growing range of RF and power semiconductor applications. This transition aligns with Asahi Kasei’s broader portfolio optimization strategy, as detailed in the company’s recent press release.
The UVC LED market is entering an important inflection point, where market expansion, depends increasingly on substrate quality. AlN remains a critical platform material for high performance UVC LEDs, and recent progress at Crystal IS—including the establishment of a 100 mm single‑crystal AlN pilot production line—positions the company to more effectively support customers as the market expands.
By devoting our efforts to substrates, Crystal IS can concentrate its resources on what it does best: delivering high‑quality, large-diameter bulk AlN with the consistency and long‑term supply required for demanding applications. While the company will no longer manufacture UVC LED devices, its deep experience in UVC applications will inform how it partners with customers to aid their speed and efficiency in developing advanced devices on AlN platforms.
This customer‑centric, application‑driven approach has long defined Crystal IS’s role in the LED ecosystem and will now extend to RF and power semiconductor markets, where AlN substrates are increasingly critical to device performance. By leveraging lessons learned from LED development—such as close collaboration, application insight, and hands‑on technical support—Crystal IS aims to help customers accelerate innovation and overcome materials challenges in these emerging high‑performance markets.
With large-diameter AlN technology now proven and ready to stand on its own, Crystal IS is defining the standard for advanced AlN substrates—powering the next generation of UVC, RF, and power devices.
