Crystal IS has produced its one hundredth 100 mm bulk Aluminum Nitride (AlN) wafer from its new 100 mm pilot-production line. With an initial capacity...Read More
Aluminum Nitride (AlN) is an ultra wide bandgap semiconductor that provides foundational benefits in devices for optoelectronics, RF and power. As the electronics industry evolves,...Read More
The need for robust, high performing devices in the defense market continues to drive innovation and progress in materials research. These devices require high power...Read More
In the rapidly evolving world of semiconductor technology, one material is emerging as a potential game-changer: aluminum nitride (AlN). At Crystal IS, we’ve been at...Read More
III-nitride semiconductor materials, (Al, In, Ga) N, are excellent wide bandgap semiconductors increasingly evident in modern electronic and optoelectronic applications. Among all the III-nitride materials,...Read More
Crystal IS was founded in 1997 by Leo Schowalter and Glen Slack to develop native Aluminum Nitride (AlN) substrate technology for more powerful and reliable...Read More
